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Guangdong Uchi Electronics Co.,Ltd
Guangdong Uchi Electronics Co.,Ltd Manufactuer of Varistor, Thermistor, Capacitor,Fuse & Resistor since 2006 !
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SOT-89 D882 NPN Electronic Transistors Plastic Encapsulate Power Dissipation

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SOT-89 D882 NPN Electronic Transistors Plastic Encapsulate Power Dissipation

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Brand Name : UCHI

Model Number : D882

Certification : Completed

Place of Origin : Dongguan China

MOQ : 1000PCS

Price : Negotiable

Payment Terms : T/T, Western Union

Supply Ability : 5000pcs

Delivery Time : 3weeks

Packaging Details : Standard

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SOT-89 D882 Plastic-Encapsulate Transistors

Features
Power dissipation

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 3 A
PC Collector Power Dissipation 0.5 W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55~150 ℃

ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC = 100μA, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30 V
Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 6 V
Collector cut-off current ICBO VCB= 40V, IE=0 1 µA
Collector cut-off current ICEO VCE= 30V, IB=0 10 µA
Emitter cut-off current IEBO VEB= 6V, IC=0 1 µA
DC current gain hFE(1) VCE=2V, IC= 1A 60 400
hFE(2) VCE=2V, IC= 100mA 32
Collector-emitter saturation voltage VCE(sat) IC= 2A, IB= 0.2 A 0.5 V
Base-emitter saturation voltage VBE(sat) IC= 2A, IB= 0.2 A 1.5 V
Transition frequency fT VCE= 5V , Ic=0.1A f =10MHz 50 MHz

CLASSIFICATION OF hFE(1)

Rank R O Y GR
Range 60-120 100-200 160-320 200-400

Typical Characteristics

SOT-89 D882 NPN Electronic Transistors Plastic Encapsulate Power Dissipation


Product Tags:

NPN electronic transistors

      

Plastic Encapsulate electronic transistors

      

Power Dissipation electronic transistors

      
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